Laser annealing of sputter-deposited �?-SiC and �?-SiC𝑥N�? films

Bulletin of materials science

W Miyakawa¹  F D Origo¹  M A Fraga²  M Massi²  I C Oliveira² 

[1] Institute for Advanced Studies, SJ dos Campos, Brazil$$Institute for Advanced Studies, SJ dos Campos, BrazilInstitute for Advanced Studies, SJ dos Campos, Brazil$$;Plasmas and Processes Laboratory, Technological Institute of Aeronautics, SJ dos Campos, Brazil$$Plasmas and Processes Laboratory, Technological Institute of Aeronautics, SJ dos Campos, BrazilPlasmas and Processes Laboratory, Technological Institute of Aeronautics, SJ dos Campos, Brazil$$

关键词: Silicon carbide;    silicon carbonitride;    amorphous films;    sputtering;    laser annealing.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

This work describes the laser annealing of ð‘�?-SiC and ð‘�?-SiC_ð‘�?N_ð‘�? films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of ð‘�?-SiC_ð‘�?N_ð‘�? thin films were produced under different N₂/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiC_ð‘�?N_ð‘�? films.

【 授权许可】

Unknown