Synthesis and characterization of amorphous carbon nitride films

THIN SOLID FILMS

卷:290

Article; Proceedings Paper

Holloway, BC ; Shuh, DK ; Kelly, MA ; Tong, W ; Carlisle, JA ; Jimenez, I ; Sutherland, DGJ ; Terminello, LJ ; Pianetta, P ; Hagstrom, S

关键词: carbon nitride;    amorphous films;    X-ray photoelectron spectroscopy;    near edge X-ray absorption fine structure (NEXAFS);   

DOI  :  10.1016/S0040-6090(96)09203-6

来源: Elsevier

【 摘 要 】

We report the high-pressure, 1066 Pa (8 Torr), chemical vapor deposition (CVD) synthesis of amorphous carbon nitride films using a d.c. glow discharge technique. X-ray photoelectron spectroscopy and near edge X-ray absorption fine structure were used to study the him stoichiometry and bonding as a function of substrate temperature and flux of hydrogen to the growth surface. Experiments show that the film stoichiometry is constant with substrate temperature up to 600 degrees C, above which film growth was not observed. The addition of small amounts (1.5 at.%) of molecular hydrogen causes poisoning of film growth. Multiple sp(2) bonding states, with little sp(3) bonding, were present in the films. Scanning electron microscopy of the films reveals an unusual filamentary growth phase.

【 授权许可】

Free