Formation of InN nanoparticle and nanorod structures by nitrogen plasma annealing method

Bulletin of materials science

Deepak Varandani²  A K Tyagi¹  G Mangamma¹  Ajay Kumar Mann²  Bodh Raj Mehta²  Lalit Kumar Malhotra² 

[1] Material Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India$$Material Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, IndiaMaterial Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India$$;Department of Physics, Indian Institute of Technology Delhi, New Delhi 110 016, India$$Department of Physics, Indian Institute of Technology Delhi, New Delhi 110 016, IndiaDepartment of Physics, Indian Institute of Technology Delhi, New Delhi 110 016, India$$

关键词: Indium;    indium nitride;    plasma annealing.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

In the present study, a novel method involving nitrogen plasma annealing has been reported for preparing InN nanoparticle/nanorod structures and for improving the properties of InN nanoparticle layers. Plasma annealed structures have been characterized by X-ray diffraction, atomic force microscopy and photoluminescence spectroscopy techniques. InN nanoparticle layers have been prepared using activated reactive evaporation set up. It has been observed that there is a remarkable improvement in the conductivity and crystallinity of InN nanoparticle layers on annealing in nitrogen plasma. This has been attributed to the increase in the nitrogen content of the samples. Experiments involving plasma annealing of In nanorods deposited oxide template has also been carried out. It was found that on plasma treatment In nanorods get converted to mixed phase InN nanorods with hexagonal and cubic fractions.

【 授权许可】

Unknown