Characterization of nanocrystalline cadmium telluride thin films grown by successive ionic layer adsorption and reaction (SILAR) method

Bulletin of materials science

D K Kulkarni¹  R J Dhokne²  V S Sangawar²  A U Ubale²  P S Chikhlikar² 

[1] Department of Physics, Institute of Science, Nagpur 440 001, India$$Department of Physics, Institute of Science, Nagpur 440 001, IndiaDepartment of Physics, Institute of Science, Nagpur 440 001, India$$;Department of Physics, Govt. Vidarbha Institute of Science and Humanities, Amravati 444 604, India$$Department of Physics, Govt. Vidarbha Institute of Science and Humanities, Amravati 444 604, IndiaDepartment of Physics, Govt. Vidarbha Institute of Science and Humanities, Amravati 444 604, India$$

关键词: Thin film;    CdTe;    SILAR method.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Structural, electrical and optical characteristics of CdTe thin films prepared by a chemical deposition method, successive ionic layer adsorption and reaction (SILAR), are described. For deposition of CdTe thin films, cadmium acetate was used as cationic and sodium tellurite as anionic precursor in aqueous medium. In this process hydrazine hydrate is used as reducing agent and NH₄OH as the catalytic for the decomposition of hydrazine. By conducting several trials optimization of the adsorption, reaction and rinsing time duration for CdTe thin film deposition was done. In this paper the structural, optical and electrical properties of CdTe film are reported. The XRD pattern shows that films are nanocrystalline in nature. The resistivity is found to be of the order of 4.11 Ã�? 10³ ð›�?-cm at 523 K temperature with an activation energy of ∼ 0.2 eV. The optical absorption studies show that films have direct band gap (1.41 eV).

【 授权许可】

Unknown