Next Generation Semiconductor-Based Radiation Detectors Using Cadmium Magnesium Telluride | |
Trivedi, Sudhir B1  Kutcher, Susan W1  Palsoz, Witold2  | |
[1] Brimrose Technology Corporation, Sparks Glencoe, MD (United States);Brimrose Technology Corporation, Sparks Glencoe, MD (United St | |
关键词: STTR Report; Gamma-Ray Detectors; Cadmium Magnesium Telluride; Cadmium Zinc Telluride; Nuclear Physics; Wide-Bandgap II-VI Semiconductors; CdTe; | |
DOI : 10.2172/1165052 RP-ID : DOE-BTC--11328 PID : OSTI ID: 1165052 Others : Other: 14SC500368 (Purchase Request or Funding Document) |
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美国|英语 | |
来源: SciTech Connect | |
【 摘 要 】
The primary objective of Phase I was to perform extensive studies on the purification, crystal growth and annealing procedures of CdMgTe to gain a clear understanding of the basic material properties to enable production of detector material with performance comparable to that of CdZnTe. Brimrose utilized prior experience in the growth and processing of II-VI crystals and produced high purity material and good quality single crystals of CdMgTe. Processing techniques for these crystals including annealing, mechanical and chemical polishing, surface passivation and electrode fabrication were developed. Techniques to characterize pertinent electronic characteristics were developed and gamma ray detectors were fabricated. Feasibility of the development of comprehensive defect modeling in this new class of material was demonstrated by our partner research institute SRI International, to compliment the experimental work. We successfully produced a CdMgTe detector that showed 662 keV gamma response with energy resolution of 3.4% (FWHM) at room temperature, without any additional signal correction. These results are comparable to existing CdZnTe (CZT) technology using the same detector size and testing conditions. We have successfully demonstrated detection of gamma-radiation from various isotopes/sources, using CdMgTe thus clearly proving the feasibility that CdMgTe is an excellent, low-cost alternative to CdZnTe.
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