Experimental �??'' of As at 170, 200, 250 and 300 K from the Bijvoet pairs of GaAs

Bulletin of materials science

N Srinivasan²  G Raja Sudha²  D Arthi²  S Prasanna Subramanian²  K Vimala Devi²  R Saravanan¹ 

[1] The Madura College, Madurai 625 011, India$$The Madura College, Madurai 625 011, IndiaThe Madura College, Madurai 625 011, India$$;Department of Physics, Thiagarajar College, Madurai 625 009, India$$Department of Physics, Thiagarajar College, Madurai 625 009, IndiaDepartment of Physics, Thiagarajar College, Madurai 625 009, India$$

关键词: X-ray;    anomalous dispersion;    IIIâ€�?�V compound semiconductor;    GaAs.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Anomalous dispersion effects lead to the modification of the measured X-ray structure factors. In this work, we have determined the imaginary part of the anomalous dispersion correction terms (�??' ) of arsenide atom (As), through the X-ray data collected using spherical single crystal of GaAs, at various temperatures, i.e. 170, 200, 250 and 300 K. It is stressed that more measurements of �??' of the elements are needed to confirm the theoretical calculations.

【 授权许可】

Unknown