Metallo�?�organic compound-based plasma enhanced CVD of ZrO2 films for microelectronic applications

Bulletin of materials science

H D Banerjee¹  S K Samanta²  S Chatterjee²  C K Maiti² 

[1] Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India$$Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, IndiaMaterials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India$$;Department of Electronics & ECE, Indian Institute of Technology, Kharagpur 721 302, India$$Department of Electronics & ECE, Indian Institute of Technology, Kharagpur 721 302, IndiaDepartment of Electronics & ECE, Indian Institute of Technology, Kharagpur 721 302, India$$

关键词: Zirconium dioxide;    high-k;    PECVD;    EOT.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

ZrO₂ films on silicon wafer were deposited by microwave plasma enhanced chemical vapour deposition technique using zirconium tetratert butoxide (ZTB). The structure and composition of the deposited layers were studied by fourier transform infrared spectroscopy (FTIR). The deposition rates were also studied. MOS capacitors fabricated using deposited oxides were used to characterize the electrical properties of ZrO₂ films. The films showed their suitability for microelectronic applications.

【 授权许可】

Unknown