Effect of 80 keV Ar+ implantation on the properties of pulse laser deposited magnetite (Fe3O4) thin films

Bulletin of materials science

U D Lanke¹ 

[1] Metallurgical Engineering and Materials Science Department, Indian Institute of Technology, Mumbai 400 076, India$$School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington, New Zealand$$Metallurgical Engineering and Materials Science Department, Indian Institute of Technology, Mumbai 400 076, IndiaMetallurgical Engineering and Materials Science Department, Indian Institute of Technology, Mumbai 400 076, India$$School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington, New Zealand$$School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington, New ZealandMetallurgical Engineering and Materials Science Department, Indian Institute of Technology, Mumbai 400 076, India$$School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington, New Zealand$$

关键词: Implantation;    magnetite;    thin films;    pulsed laser ablation;    Verwey transition.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Highly oriented thin films of Fe₃O₄ were deposited on (100) LaAlO₃ substrates by pulsed laser ablation. The structural quality of the films was confirmed by X-ray diffraction (XRD). The films showed a Verwey transition near 120 K. The films were subjected to 80 keV Ar⁺ implantation at different ion doses up to a maximum of 6 Ã�? 10¹⁴ ions/cm². Ion beam induced modifications in the films were investigated using XRD and resistance vs temperature measurements. Implantation decreases the change in resistance at 120 K and this effect saturates beyond 3 Ã�? 10¹⁴ ions/cm². The Verwey transition temperature, ð‘�??_ð‘�?, shifts towards lower temperatures with increase in ion dose.

【 授权许可】

Unknown