Current�?�voltage studies on �?-FeSi2/Si heterojunction

Bulletin of materials science

S Kal²  A Datta¹  S Basu¹ 

[1] Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India$$Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, IndiaMaterials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India$$;Department of Electronics & ECE, Indian Institute of Technology, Kharagpur 721 302, India$$Department of Electronics & ECE, Indian Institute of Technology, Kharagpur 721 302, IndiaDepartment of Electronics & ECE, Indian Institute of Technology, Kharagpur 721 302, India$$

关键词: Silicide;    semiconducting silicide;    heterojunction;    pulsed laser;    𝐼â€�?�ð�?��?? characteristics.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

𝐼â€�?�ð�?��?? characteristics of both ð›�?-FeSi₂/n-Si and ð›�?-FeSi₂/p-Si were studied at room temperature. The junctions were formed by depositing Fe on Si selectively followed by thermal annealing and some samples were later treated by pulsed laser. Temperature of thermal annealing and diode area were also varied. 𝐼â€�?�ð�?��?? studies on all these samples were done and ideality factors were computed. Results obtained were interpreted.

【 授权许可】

Unknown