Ti/4H-SiC schottky barrier modulation by ultrathin a-SiC:H interface layer

THIN SOLID FILMS

卷:721

Article

Triendl, Fabian¹  Pfusterschmied, Georg¹  Berger, Claudio¹  Schwarz, Sabine²  Artner, Werner³  Schmid, Ulrich¹ 

[1] TU Wien, Inst Sensor & Actuator Syst, Guhausstr 27-29, A-1040 Vienna, Austria

[2] TU Wien, Univ Serv Ctr Transmiss Electron Microscopy USTEM, Wiedner Hauptstr 8-10-057-02, A-1040 Vienna, Austria

[3] TU Wien, Ctr Xray Technol, Getreidemarkt 9, A-1060 Vienna, Austria

关键词: Wide Bandgap;    Plasma-enhanced chemical vapor deposition;    Schottky diode;    Silicide;   

DOI  :  10.1016/j.tsf.2021.138539

来源: Elsevier

【 摘 要 】

The possibility of Schottky barrier height (SBH) modulation of conventional Ti/4H-SiC Schottky diodes by inserting an ultrathin a-SiC:H layer and the influence of annealing at 600 degrees C are investigated. Amorphous SiC:H layers between 0.7 and 4 nm thickness were grown on the 4H-SiC surface using plasma-enhanced chemical vapor deposition prior to Ti deposition. Diode properties are extracted using current-voltage and capacitance-voltage measurements between 300 and 450 K and compared to conventional Ti/4H-SiC diodes. Transmission electron microscopy and X-ray diffraction were applied to investigate the microstructure of as-deposited and annealed diodes. The integration of an a-SiC:H interface layer in combination with thermal annealing resulted in very ideal diode characteristics, whereas the duration of the annealing can be used to adjust the SBH. A room temperature SBH range between 0.78 and 1.16 V could be covered using different interface layer thicknesses and annealing durations.

【 授权许可】

Free