The transition from linear to-parabolic growth of Cu3Si phase in Cu/a-Si system

SCRIPTA MATERIALIA

卷:149

Article

Parditka, Bence¹  Zaka, Hanaa^1,2  Erdelyi, Gabor¹  Langer, Gabor A.¹  Ibrahim, Mohammed³  Schmitz, Guido⁴  Balogh-Michels, Zoltan⁵  Erdelyi, Zoltan¹ 

[1] Univ Debrecen, Dept Solid State Phys, POB 400, H-4002 Debrecen, Hungary

[2] Ain Shams Univ, Dept Phys, Nanosci & Semicond Labs, Fac Educ, Cairo 11566, Egypt

[3] Al Jouf Univ, Fac Sci & Art, Dept Phys, Al Qurayyat, Saudi Arabia

[4] Univ Stuttgart, Inst Mat Sci, Heisenbergstr 3, D-70569 Stuttgart, Germany

[5] Empa, Swiss Fed Labs Mat Sci & Technol, Ctr Xray Analyt, Uberlandstr 129, CH-8600 Dubendorf, Switzerland

关键词: Silicide;    Solid state reaction;    SNMS;    Metal-induced crystallization;    Growth kinetics;   

DOI  :  10.1016/j.scriptamat.2018.01.035

来源: Elsevier

【 摘 要 】

The solid state reaction between Cu and a-Si films was investigated at 150-200 degrees C by depth profiling with secondary neutral mass spectrometry. Intermixing was observed leading to the formation of a homogeneous Cu3Si layer at the interface. The growth of the crystalline silicide follows a parabolic law at 165 degrees C and 200 degrees C. At 150 degrees C a transition from linear to parabolic kinetics is observed. Combining with our previous experimental results showing linear kinetics at 135 degrees C [Acta Materialia, 61 (2013) 7173-7179], the temperature dependence of the linear and parabolic coefficients as well as the transition length can be estimated. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd.

【 授权许可】

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