Sn-inserted Al-induced layer exchange for large-grained GeSn thin films on insulator

THIN SOLID FILMS

卷:616

Article

Toko, Kaoru¹  Oya, Naoki¹  Nakata, Mitsuki¹  Suemasu, Takashi¹ 

[1] Univ Tsukuba, Inst Appl Phys, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058573, Japan

关键词: Metal-induced crystallization;    Al-induced layer exchange;    Crystal orientation;    Solid phase crystallization;    Polycrystalline films;    Semiconducting germanium;   

DOI  :  10.1016/j.tsf.2016.08.046

来源: Elsevier

【 摘 要 】

Large-grained polycrystalline GeSn layers on glass are achieved through the layer exchange between a-Ge and Sn-doped Al layers. The thicker Sn layers, inserted below Al layers, provided the faster growth velocity, resulting in the smaller grain size of the GeSn layer. Controlling the Sn thickness (10 nm) and the growth temperature (300 degrees C) allowed for approximately 80% (111)-oriented GeSn layer with grains having an average size of 40 pm. The lower growth temperature led to the higher Sn content in GeSn: 300 degrees C resulted in a Sn content of 2%. These findings are meaningful to researches related to GeSn on insulators for fabricating advanced electrical and optical devices on inexpensive substrates as well as on Si platforms. (C) 2016 Elsevier B.V. All rights reserved.

【 授权许可】

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