Atmospheric Effects on Growth Kinetics and Electronic Properties of Passive Film of Aluminum in Borate Buffer Solution

Journal of the Korean Chemical Society

Younkyoo Kim¹ 

关键词: n-Çü ¹ÝµµÃ¼;    Aluminum;    Oxidation-film;    Logarithmic rate law;    Mott-Schottky;    n-type semiconductor;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on aluminum were investigated, using the potentiodynamic method, chronoamperometry, and multi-frequency electrochemical impedance spectroscopy. The corrosion of aluminum was heavily influenced by the degree of oxygen concentration because of the increasing reduction current. The oxide film formed during the passivation process of aluminum has showed the electronic properties of n-type semiconductor, which follow from the Mott-Schottky equation. It was found out that the passive film (Al(OH)3) of Al formed in the low electrode potential changes to Al2O3 while the electrode potential increases. The growth kinetics data as measured by chronoamperometry suggests a mechanism in which the growth of the film of Al2O3 is determined by field-assisted transport of ions through the film.

【 授权许可】

Unknown