Investigation of the Growth Kinetics of Al Oxide Film in Sulfuric Acid Solution

Journal of the Korean Chemical Society

Jung Kyoon Chon¹  Younkyoo Kim¹ 

关键词: n-Çü ¹ÝµµÃ¼;    Mott-Schottky;    Aluminum oxide;    Passive film;    Oxide film;    n-Type semiconductor;    Mott-Schottky;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

We have investigated the growth kinetics of Al oxide film by anodization in sulfuric acid solution and the electronic properties of this film using electrochemical impedance spectroscopy. Al oxide film consisted Al2O3 was grown based on the point defect model and shown the eclctronic properties of n-type semiconductor.

【 授权许可】

Unknown