Defence Science Journal | |
Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration (Review Papers) | |
C. Roy Chaudhuri2  H. Saha1  | |
[1] Jadavpur University, Kolkata-700 032;Bengal Engineering and Science University, Shibpur, Howrah-711 103 | |
关键词: CMOS; microelectromechanical system; MEMS; sensors; RF MEMS; integrated design; CMOS-MEMS integrated systems; | |
DOI : | |
学科分类:社会科学、人文和艺术(综合) | |
来源: Defence Scientific Information & Documentation Centre | |
【 摘 要 】
A review of the integration of the complementry metal oxide semiconductors (CMOS) circuit with the microelectromechanical systems (MEMS) structures for sensing and RF applications has been presented. Specifically, the integrated mechanical sensors, chemical gas sensors, and biochemical sensors have been discussed. Application of MEMS as switches, varactors, and inductors and their integration in RF circuits has also been highlighted. The fabrication and design challenges for the CMOS-MEMS integration have been described. A new design methodology for integration of thermal effects in an integrated pressure sensor has been proposed. Defence Science Journal, 2009, 59(6), pp.557-567, DOI:http://dx.doi.org/10.14429/dsj.59.1560
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201912010140017ZK.pdf | 1936KB | download |