Technology CAD of SiGe heterojunction field effect transistors (Short Communication)

Defence Science Journal

S. Maikap¹  B. Senapati¹  C. K. Maiti¹ 

[1] Indian Institute of Technology Kharagpur, Kharagpur

关键词: Electronics;    Semiconductors;    Field Effect Transistors;   

DOI  :  

学科分类：社会科学、人文和艺术（综合）

来源: Defence Scientific Information & Documentation Centre

【 摘 要 】

"A 2-D virtual wafer fabricationsimulation suite has been employed for the technology CAD of SiGechannel heterojunction field effect transistors (HFETs). Completefabrication process of SiGe p-HFETs has been simulated. The SiGematerial parameters and mobility model were incorporated to simulateSi/SiGe p-HFETs with a uniform germanium channel having an Lejf of 0.5~m. A significant improvement in linear transconductance is observedwhen compared to control-silicon p-MOSFETs.

【 授权许可】

Unknown