Lead Chalcogenide on Silicon Infrared Focal Plane Arrays for Thermal Imaging(Review Paper)

Defence Science Journal

Karim Alchalabi¹  Dmitri Zimin¹  Hans Zogg¹ 

[1] Institute of Quantum Eleclronics, Swiss Federal Institute of Technology, Zurich, Switzerland

关键词: Thermal imaging;    Detectors;    Molecular beam epitaxy;    Lead chalcogenides;    Silicon( III) substrates;   

DOI  :  

学科分类：社会科学、人文和艺术（综合）

来源: Defence Scientific Information & Documentation Centre

【 摘 要 】

"Narrow gap IV-VI [lead chalcogenides likePbl-xSnxSe and PbTe] layers grown epitaxially on silicon( III)substrates by molecular beam epitaxy exhibit high quality despite thelarge lattice and thermal expansion mismatch. A CaF2 buffer layer isemployed for compatibility. Due to easy glide of misfit dislocations inthe IV- VI layers, thei1rtal strains relax even at cryogenic.temperatures and after many temperature cyclings. The highpermittivities of the IV- VI layers effectively shield the electricfields from charged defects. Higher quality devices are obtained fromlower quality material, at variance to narrow gap 11- VI and 111- Vcompounds. Material characterisation and sensor array properties havebeen reviewed. Schottky barrier or p-n+ sensor arrays have beendelineated using standard photolithography. At low temperatures, thesensitivities are limited by defects, mainly dislocations, and thedevice performance is predicted by the dislocation density. At highertemperatures, the ultimate theoretical sensitivity is obtained withSchottky barrier devices despite large mismatch and with only 3 µmthickness of the layers. First chara'cterisations of a 96 x 128 array ona silicon substrate containing the read-out circuits show that theconcept is functional and gives high yield.

【 授权许可】

Unknown