Area-efficient analog peripheral circuit techniques for Solid State Drive with NAND flash memories

IEICE Electronics Express

Youngil Kim¹  Sangsun Lee¹ 

[1] Department of Nanoscale Semiconductor Engineering, Hanyang University

关键词: Solid State Drive (SSD);    NAND flash memory;    charge pump;    boost converter;    VDC;   

DOI  :  10.1587/elex.10.20130127

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)This letter proposes area-efficient peripheral circuit techniques for 3D Solid State Drive (SSD) with NAND flash memories. We reduced charge pump stage using external high voltage of 12V and 5V, and improve target voltage accuracy using a cascode error amplifier of high voltage linear regulator. Also, we proposed fast transient response active mode VDC using NMOS pass element with external high voltage of 5V.

【 授权许可】

Unknown