期刊论文详细信息
IEICE Electronics Express | |
Soft pre-charge H/V switch for charge pump with NAND flash memory using external power | |
Youngil Kim1  Sangsun Lee1  | |
[1] Department of Nanoscale Semiconductor Engineering, Hanyang University | |
关键词: solid state drive (SSD); NAND flash memory; charge pump; boost converter; soft start; high voltage switch; | |
DOI : 10.1587/elex.10.20130497 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(9)This letter describes a soft pre-charge high voltage switch for a program/erase charge pump (P/E Pump) with NAND flash memory using an external high voltage of 12V. The use of a external high voltage reduces the P/E Pump stage and improves the power efficiency. The external high voltage is used as input power of the P/E Pump. The soft pre-charge high voltage switch is proposed to transfer the external high voltage without a breakdown issue. The proposed high voltage switch passes the external high voltage of +12V to be ramped up linearly at the start-up phase.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300838391ZK.pdf | 460KB | download |