期刊论文详细信息
IEICE Electronics Express
Soft pre-charge H/V switch for charge pump with NAND flash memory using external power
Youngil Kim1  Sangsun Lee1 
[1] Department of Nanoscale Semiconductor Engineering, Hanyang University
关键词: solid state drive (SSD);    NAND flash memory;    charge pump;    boost converter;    soft start;    high voltage switch;   
DOI  :  10.1587/elex.10.20130497
学科分类:电子、光学、磁材料
来源: Denshi Jouhou Tsuushin Gakkai
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【 摘 要 】

References(9)This letter describes a soft pre-charge high voltage switch for a program/erase charge pump (P/E Pump) with NAND flash memory using an external high voltage of 12V. The use of a external high voltage reduces the P/E Pump stage and improves the power efficiency. The external high voltage is used as input power of the P/E Pump. The soft pre-charge high voltage switch is proposed to transfer the external high voltage without a breakdown issue. The proposed high voltage switch passes the external high voltage of +12V to be ramped up linearly at the start-up phase.

【 授权许可】

Unknown   

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