IEICE Electronics Express | |
The design of high holding voltage SCR for whole-chip ESD protection | |
Jong-Ki Kwon1  Yong-Seo Koo2  Kui-Dong Kim1  Kwang-Yeob Lee3  | |
[1] Electronics and Telecommunications Research Institute;Department of Electronic Engineering Seokyeong University;Department of Computer Engineering Seokyeong University | |
关键词: ESD; SCR; triggering voltage; holding voltage; | |
DOI : 10.1587/elex.5.624 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(4)In this paper, we have investigated the electrical characteristics of Silicon Controlled Rectifier (SCR)-based ESD power clamp circuit with high holding voltage for whole-chip ESD protection. The proposed ESD power clamp circuit (HHVSCR: High Holding Voltage SCR) has different well (n/p-well) length (3/7µm - 8/2µm) and p-drift (p+) length (8µm - 16µm). The measurement results indicate that dimension of n/p-well and p-drift has a great effect on holding voltage (2V-5V) and a little effect on the triggering voltage (6.5V∼7V). And the whole-chip ESD protection was designed for 2.5∼3.3V applications, this whole-chip ESD protection design can be discharged in ESD-stress mode (PD, ND, PS, NS) as well as VDD-VSS mode. The robustness of the novel ESD protection cells were measured to 6kV (HBM: Human Body Model), 280V (MM: Machine Model).
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300895530ZK.pdf | 1107KB | download |