Analysis of the electrical characteristics of SCR-based ESD Protection Device (PTSCR) in 0.13/0.18/0.35um process technology

IEICE Electronics Express

Yong-Seo Koo¹ 

[1] Department of Electronics and Electrical Engineering Dankook University

关键词: ESD;    SCR;    gate grounded NMOS (GGNMOS);    holding voltage;    trigger current;   

DOI  :  10.1587/elex.8.8

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)Cited-By(2)In this paper, an experimental analysis of the electrical characteristics of the PTSCR was conducted. The PTSCR contains a high trigger current and a holding voltage that enables latch-up immune during normal operation. The PTSCR in each process technology is verified by the TLP system as well as a hot chuck controller. The experimental results show that the trigger current and holding voltage are higher than that of other SCR devices. At higher temperatures, the holding voltage of the PTSCR decreased due to the operation mechanism of the SCR, while the trigger current increased due to the MOSFET trigger mechanism.

【 授权许可】

Unknown