Effect of charge sharing on SEU sensitive area of 40-nm 6T SRAM cells

IEICE Electronics Express

Weicheng Zhang¹  Minxuan Zhang²  Chao Song²  Peng Li²  Hua Fan²  Zhenyu Zhao² 

[1] ATR Key Lab, National University of Defense Technology;College of Computer, National University of Defense Technology

关键词: 6T SRAM cell;    charge collection;    charge sharing;    single event upset (SEU) sensitive area;    single event upset reversal (SEUR);   

DOI  :  10.1587/elex.11.20140051

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(11)Cited-By(2)The effect of charge sharing on single event upset (SEU) sensitive area of SRAM cells is studied in a 40-nm bulk CMOS technology. All transistors in a 6T SRAM cell are simulated in 3D TCAD models, and SEU sensitive areas are measured in different simulation conditions. We find the charge sharing can reduce SEU sensitive area of SRAM cells. The effect of charge sharing on radiation sensitivity of both PMOS and NMOS are analyzed in depth. The works in this paper can guide the single event rate prediction and the hardened design of SRAMs in advanced technologies.

【 授权许可】

Unknown