Silicon Mach-Zehnder modulator using low-loss phase shifter with bottom PN junction formed by restricted-depth doping

IEICE Electronics Express

Guo-Qiang Lo¹  Kazuhiro Goi²  Dim-Lee Kwong¹  Xiaoguang Tu¹  Yong Tsong Tan⁴  Kensuke Ogawa²  Ching Eng Png³  Vivek Dixit³  Soon Thor Lim³  Tsung-Yang Liow¹ 

[1] Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR);Optics and Electronics Laboratory, Fujikura Ltd.;Institute of High Performance Computing, Agency for Science, Technology and Research (A*STAR);Power and Telecommunication Systems Company, Fujikura Ltd.

关键词: modulators;    waveguide modulators;    silicon photonics;   

DOI  :  10.1587/elex.10.20130552

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(18)A silicon Mach-Zehnder modulator with a low-loss phase shifter formed by restricted-depth doping is fabricated and characterized. The phase shifter has a PN junction at the bottom of the rib waveguide, whereas the top of the rib is un-doped. Device simulations confirm that the phase-shifter loss is reduced by 26−28% with an increased phase-shifter length to keep a π phase shift with the same bias condition in comparison with a conventional PN junction through the whole depth. An optical loss as low as 1.6dB has been achieved in the fabricated phase shifter with a 6-mm length. The Mach-Zehnder modulator with the phase shifter has a fiber-to-fiber loss of 9dB. 10-Gbps non-return-to-zero on-off keying with extinction ratio of 11dB is demonstrated under push-pull operation with a 6Vpp driving voltage on each arm.

【 授权许可】

Unknown