A 0.13-µm CMOS 0.1-12GHz active balun-LNA for multi-standard applications

IEICE Electronics Express

Junyan Ren¹  Wei Li¹  Ning Li¹  Kaichen Zhang¹ 

[1] State Key Laboratory of ASIC & System; Fudan University

关键词: low noise amplifier (LNA);    active balun;    wideband;    single-end;   

DOI  :  10.1587/elex.10.20130016

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)A 0.1-12GHz Low Noise Amplifier (LNA) with an active balun is proposed for multi-standard applications. In order to realize wideband matching and single-to-differential (S2D) conversion simultaneously, a single-end resistive negative feedback amplifier is adopted as the first stage for input impedance matching, and a novel active balun consisting of common source amplifier and source follower is designed as latter stage for S2D conversion. This LNA is fabricated in a 0.13-µm CMOS process with an active area of 0.33mm2. The measurement results show that over the full band of interest, the LNA achieves a minimum noise figure (NF) of 3.2dB, input reflection coefficient S11 less than -9.3dB, a power gain (S21) of 14.1dB and -3.6dBm IIP3 with a power consumption of 10.8mW from 1.2-V supply.

【 授权许可】

Unknown