Raman induced wavelength conversion in scaled Silicon waveguides

IEICE Electronics Express

Dimitris Dimitropoulos¹  Varun Raghunathan¹  Ricardo Claps¹  Bahram Jalali¹ 

[1] Electrical Engineering department, University of California Los Angeles

关键词: Integrated optics;    Nonlinear optics;    Raman scattering;    Wavelength conversion;   

DOI  :  10.1587/elex.1.298

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(13)Cited-By(3)Parametric Raman nonlinearities in Silicon waveguides is used to demonstrate wavelength conversion from Stokes to anti-Stokes channels. The effects of two photon absorption and free carrier nonlinear losses on the conversion process have also been analyzed. We find that scaling down the waveguide dimensions to submicron sizes is advantageous in terms of increasing the Raman nonlinearities and reducing the carrier lifetime and hence nonlinear absorption.

【 授权许可】

Unknown