Numerical investigation of on-chip wavelength conversion based on InP/In1-xGaxAsyP1-y semiconductor waveguide platforms

OPTICS COMMUNICATIONS

卷:473

Article

Wen, Jin^1,5,6  Li, Kang²  Gong, Yongkang³  Copner, Bethan²  Hughes, Ben⁴  Campbell, Michael A.⁴  Lazzaini, Mattia⁴  Duan, Lina¹  Ma, Chengju¹  Fan, Wei¹  Jia, Zhenan^1,5,6  Fu, Haiwei^1,5,6  Copner, Nigel² 

[1] Xian Shiyou Univ, Sch Sci, Xian 710065, Peoples R China

[2] Univ South Wales, Wireless & Optoelect Res & Innovat Ctr, Fac Comp Engn & Sci, Pontypridd CF37 1DL, M Glam, Wales

[3] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3AA, Wales

[4] Natl Phys Lab, Hampton Rd, Teddington TW11 OEW, Middx, England

[5] Shaanxi Engn Res Ctr Oil & Gas Resource Opt Fiber, Xian 710065, Peoples R China

[6] Shaanxi Key Lab Measurement & Control Technol Oil, Xian 710065, Peoples R China

关键词: InP/In1-xGaxAsyP1-y waveguide;    Wavelength conversion;    Four-wave mixing;    Nonlinear optics;   

DOI  :  10.1016/j.optcom.2020.125921

来源: Elsevier

【 摘 要 】

We design the high confinement InP/In(1-x)Ga(x)As(y)P(1-y)semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1-xGaxAsyP1-y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency -26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1-xGaxAsyP1-y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.

【 授权许可】

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