Comparative study of the static and switching characteristics of SiC and Si MOSFETs

IEICE Electronics Express

Tsuyoshi Funaki¹  Yuki Nakano²  Takashi Nakamura² 

[1] Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate school of Engineering;Rohm Co. Ltd.

关键词: SiC MOSFET;    I-V characteristics;    C-V characteristics;    conduction loss;    fast switching;   

DOI  :  10.1587/elex.8.1215

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)SiC power devices with low loss and fast switching capability have been developing. This study experimentally characterizes trench gate and planar gate SiC MOSFETs, and discusses the difference to conventional Si MOSFET in terms of static and dynamic performance. First, the static current-voltage (I-V) characteristics are evaluated to assess conduction loss. Next, the bias voltage dependencies of terminal capacitance (C-V) are characterized to clarify differences stemming from device configuration. Turn-off switchings for non-inductive resistive loads are examined, and the result are evaluated by associating measured C-V characteristics.

【 授权许可】

Unknown