Evaluating the single event sensitivity of dynamic comparator in 5 Gbps SerDes

IEICE Electronics Express

Pengcheng Huang¹  Yao Liu¹  Chunmei Hu¹  Jianjun Chen¹  Shuming Chen¹ 

[1] College of Computer, National University of Defense Technology

关键词: dynamic comparator;    SE sensitivity;    LET threshold;    sensitive window rate;   

DOI  :  10.1587/elex.12.20150860

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(17)The radiation induced soft error of dynamic comparator for a 65 nm CMOS technology in 5 Gbps half-rate SerDes (serializer and deserializer) is evaluated using three-dimensional TCAD mixed-mode simulation. The sensitivity of MOSFET is simulated combined with the polarity of differential inputs and the working phases. Four types of single-event (SE) response are classified and the sensitivity grades are summarized. Our research presents that the NMOS of the cross-coupled inverter is the most sensitive.

【 授权许可】

Unknown