CMOS cross-coupled charge pump with improved latch-up immunity

IEICE Electronics Express

Chilgee Lee²  Joung-Yeal Kim²  Yong-Gu Kang²  Bai-Sun Kong²  Su-Jin Park²  Tae Hee Han²  Young-Hyun Jun¹ 

[1] DRAM Design Team, Memory Division, Samsung Electronics;School of Information and Communication Eng., Sungkyunkwan Univ.

关键词: bulk forward;    charge pump;    latch-up;    voltage doubler;   

DOI  :  10.1587/elex.6.736

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)Cited-By(2)In this paper, a novel CMOS charge pump with substantially improved immunity to latch-up is presented. By utilizing a dedicated bulk pumping and blocking (DBPB) technique, the proposed charge pump achieves greatly reduced forward voltage of source/drain-substrate junction of transistors, resulting in decreased charge loss and increased latch-up immunity. Comparison results indicated that the maximum bulk forward voltage of the proposed charge pump was less than 0.05V (88% improvement) for zero output current during power-up, and less than 0.12V (88% improvement) regardless of the amount of output current during ordinary pumping operation.

【 授权许可】

Unknown