Area-efficient charge pump with local boost technique for embedded flash memory

IEICE Electronics Express

Xiaoyun Li¹  Weiran Kong¹  Jun Xiao¹  Shichang Zou¹  Yiran Xu²  Guangjun Yang²  Wenyi Zhu³  Jian Hu³ 

[1] Shanghai Huahong Grace Semiconductor Manufacturing Corporation;State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences;University of Chinese Academy of Sciences

关键词: area-efficient;    charge pump;    embedded flash memory;    local boost;    voltage doubler;   

DOI  :  10.1587/elex.14.20170944

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

An area-efficient charge pump (AE-CP) used for embedded flash memory is proposed with the combination of an area-efficient voltage doubler (AE-VD). An optimized strategy for AE-CP with local boost technique is discussed to maximize output capability by using low-voltage MOS capacitors together. The proposed circuits are simulated in a 130 nm CMOS process. Simulation results show the proposed AE-VD decreases the power consumption by 11.4%. And the proposed AE-CP with proposed voltage doubler achieves 29% improvement of the maximum output capability as compared to the conventional CP. A 253 × 8 KB embedded flash memory IP has been fabricated in HHGrace 130 nm 4 poly 4 metal CMOS process. The die size of the proposed IP is 0.65 mm2 and the area size of charge pump has been reduced to 0.0317 mm2 with an optimized α = 0.6 and the area ratio decreases by 10%.

【 授权许可】

CC BY