A 10.0Gb/s all-active LVDS receiver in 0.18µm CMOS technology

IEICE Electronics Express

Panduka Wijetunga¹ 

[1] Rockwell Scientific

关键词: active-peaking;    LVDS;    receiver;    amplifier;    high-speed integrated circuit;    transceiver;    CMOS integrated circuit;   

DOI  :  10.1587/elex.3.216

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)Cited-By(1)Results for a 10.0Gb/s all-active LVDS receiver, designed using active bandwidth improvement strategies, are presented. The generalized model generated for the active peak load shows that the transfer characteristic of the load is similar to that of inductive shunt peaking, and can achieve bandwidth improvements comparable to that of on-chip inductive shunt peaking without the associated area penalty. The measured 3dB bandwidth of the transceiver is 6.0GHz, and the input sensitivity (BER < 10-13) at 10.0Gb/s and 11.0Gb/s are 80mVpp and 100mVpp respectively. The total transceiver power consumption, including the 50Ω source terminated output driver, is 60mW.

【 授权许可】

Unknown