5 V input level shifter circuit for IGZO thin-film transistors

IEICE Electronics Express

KeeChan Park²  HongKyun Lym²  Chi-Sung Hwang¹  HwanSool Oh²  JaeEun Pi¹  SangHee Ko Park³ 

[1] Oxide Research Team, Electronics and Telecommunications Research Institute;Department of Electronics Engineering, Konkuk University;Department of Materials Science and Engineering, Korea Advanced Institure of Science and Technology

关键词: 5 V input;    level shifter;    depletion-mode;    oxide TFT;    active capacitor;   

DOI  :  10.1587/elex.11.20140539

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(9)A 5 V input level shifter circuit based on depletion-mode In-Ga-Zn-O thin-film transistors (TFT) worked up to 100 kHz. By employing metal-insulator-semiconductor (MIS) active capacitor, we enhanced the bootstrapping effect and reduced the rise time of the output signal. SPICE simulation results showed that the proposed level shifter worked for wide threshold voltage range from �?2 V to +1 V and the fabricated circuit exhibited the propagation delay tplh and tphl of 0.6 µsec and 0.3 µsec respectively.

【 授权许可】

Unknown