Top-Down Fabrication of Arrays of Vertical GaN Nanorods with Freestanding Top Contacts for Environmental Exposure

Proceedings

Strempel, Klaas¹  Fatahilah, Muhammad Fahlesa²  Markiewicz, Nicolai³  Casals, Olga⁴  Gad, Alaaeldin⁵ 

[1] Authors to whom correspondence should be addressed.;Institute of Nanoscience and Nanotechnology (IN2UB), Universitat de Barcelona, E-08028 Barcelona, Spain;Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, D-38106 Braunschweig, Germany;MIND, Department of Electronic and Biomedical Engineering, Universitat de Barcelona, E-08028 Barcelona, Spain;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018

关键词: GaN;    nanorods;    nanopillars;    top-down;    freest;    ing contact;    arrays;    environmental sensors;    vertical architecture;   

DOI  :  10.3390/proceedings2130845

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

Arrays of 1D-vertically arranged gallium nitride (GaN) nanorods (NRs) are fabricated on sapphire and connected to both bottom and freestanding top contacts. This shows a fully validated top-down method to obtain ordered arrays of high-surface-to-volume elements that can be electrically interrogated and used, e.g., for sensing applications. Specifically, these will be used as highly integrated heating elements for conductometric gas sensors in self-heating operation. Detailed fabrication and processing steps involving inductively coupled plasma reactive ion etching (ICP-RIE), KOH-etching, interspace filling, and electron-beam physical vapor deposition technologies are discussed, in which they can be well adjusted and combined to obtain vertical GaN NRs as thin as 300 nm in arbitrarily large and regular arrays (e.g., 1 × 1, 3 × 3, 9 × 10 elements). These developed devices are proposed as a novel sensor platform for temperature-activated measurements that can be produced at a large scale offering low-power, and very stable temperature control.

【 授权许可】

CC BY