A Phosphonic Acid Self‐assembled Monolayer on UV‐Cured Metal Oxides as Gate Dielectrics for Low‐Voltage Organic Field‐Effect Transistors

Bulletin of the Korean Chemical Society

Yujin Lee¹ 

[1] Department of Chemistry Kyonggi University GyeonggiDo 16227 Republic of Korea

关键词: UV‐;    curing;    Hybrid bilayer;    Gate dielectric;    Self‐;    assembled monolayers;    Organic field‐;    effect transistors;   

DOI  :  10.1002/bkcs.11437

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

Herein, we report on the design, preparation, and electrical properties of organic/inorganic hybrid bilayer dielectric films via facile solution‐based fabrication at room temperature for the low‐voltage operation of organic field‐effect transistors (OFETs). The hybrid bilayer dielectric films are easily fabricated by a two‐step process involving ultraviolet curing of a sol–gel zirconium oxide and deposition of hydrophobic self‐assembled monolayers. These novel dielectrics exhibit great insulating properties (leakage current densities <10−6 A/cm2 at 2 V), high capacitances (500 nF/cm2), and ultra‐smooth surfaces (root‐mean‐square roughness <0.2 nm). Consequently, the hybrid dielectrics integrated into pentacene OFETs function at relatively low voltages (less than −2.5 V) with great FET characteristics (mobility: 0.4 cm2/V s, low subthreshold swing: down to 0.2 V/dec, on/off current ratio: 105).

【 授权许可】

Unknown