A Phosphonic Acid Self‐assembled Monolayer on UV‐Cured Metal Oxides as Gate Dielectrics for Low‐Voltage Organic Field‐Effect Transistors
Log in with Open Athens, Shibboleth, or your institutional credentials.
If you have previously obtained access with your personal account, Please log in.
If you previously purchased this article, Log in to Readcube.
You previously purchased this article on READCUBE_PURCHASE_DATE. Click on an option below to access.
Logged in as READCUBE_USER. Log out of ReadCube.
Abstract
Herein, we report on the design, preparation, and electrical properties of organic/inorganic hybrid bilayer dielectric films via facile solution‐based fabrication at room temperature for the low‐voltage operation of organic field‐effect transistors (OFETs). The hybrid bilayer dielectric films are easily fabricated by a two‐step process involving ultraviolet curing of a sol–gel zirconium oxide and deposition of hydrophobic self‐assembled monolayers. These novel dielectrics exhibit great insulating properties (leakage current densities <10−6 A/cm2 at 2 V), high capacitances (500 nF/cm2), and ultra‐smooth surfaces (root‐mean‐square roughness <0.2 nm). Consequently, the hybrid dielectrics integrated into pentacene OFETs function at relatively low voltages (less than −2.5 V) with great FET characteristics (mobility: 0.4 cm2/V s, low subthreshold swing: down to 0.2 V/dec, on/off current ratio: 105).
