Device and circuit performance analysis of double gate junctionless transistors at Lg = 18 nm

The Journal of Engineering

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[1] Department of Electronics and Communication Engineering, PDPM Indian Institute of Information Technology, Design and Manufacturing Jabalpur, Madhya Pradesh, India;

关键词: CMOS integrated circuits;    field effect transistors;    SRAM chips;    technology CAD (electronics);    semiconductor device models;    transient response;    invertors;    double gate junctionless transistors;    DG inversion-mode FETs;    field effect transistors;    drain-induced barrier lowering;    steep subthreshold slope;    lower OFF state current;    pass gate logic;    inverter circuit;    static random access memory;    complementary metal-oxide semiconductor configuration;    CMOS configuration;    transient response;    SRAM cell stability;    coupled device-circuit methodology;    ATLAS TCAD mixed-mode simulator;   

DOI  :  10.1049/joe.2013.0269

来源: publisher

【 摘 要 】

The design and characteristics of double-gate (DG) junctionless (JL) devices are compared with the DG inversion-mode (IM) field effect transistors (FETs) at 45 nm technology node with effective channel length of 18 nm. The comparison are performed at iso-Vth for both n- and p-type of devices. The JL device shows lower drain-induced barrier lowering, steep subthreshold slope and lower OFF state current. For the first time, the authors demonstrate a pass gate (PG) logic, inverter circuit and static random access memory (SRAM) stability analysis using JL devices, rather than a complementary metal-oxide semiconductor (CMOS) configuration. They observed that transient response of JL PG configuration is similar to that of conventional CMOS PGs. JL inverter also shows similar transient characteristics with 25% reduction in delay and 12% improvement in 6 T SRAM cell stability compared with IMFETs, which shows large potential in digital circuit applications. The simulations were performed using coupled device-circuit methodology in ATLAS technology aided computer design (TCAD) mixed-mode simulator.

【 授权许可】

CC BY