Photoluminescence and Structural Properties of Tin‐doped ZnO Thin Films Deposited by Sol–Gel Dip Coating

Bulletin of the Korean Chemical Society

Young Leem¹  Younggyu Kim²  Jae‐³ 

[1] 749 Korea;Department of Nanoscience and Engineering Inje University Gimhae‐si 621‐

关键词: ;    ZnO thin films;    Tin doping;    Dip coating;    Photoluminescence;    X‐;    Ray diffraction;   

DOI  :  10.1002/bkcs.10306

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

Tin‐doped ZnO (TZO) thin films with various tin concentrations (0, 1, 2, 3, 4, and 5 atomic percent [at. %]) are prepared by the sol–gel dip‐coating method. The doping effects of tin on the structural and optical properties of the TZO thin films are investigated. All the samples have a granular structure consisting of small particles and exhibited a preferred c‐axis orientation. The transmittance and optical band gap of the TZO thin films increase at relatively low tin concentrations of 1–2 at. %, whereas they decrease at higher concentrations of 3–5 at. %. The ratio of near‐band‐edge emission intensity to deep‐level emission intensity significantly increases with increasing tin concentrations from 0 to 4 at. %. In addition, low‐temperature photoluminescence for undoped and 4 at. % TZO thin films are measured at 12 K to thoroughly analyze the effects of tin doping.

【 授权许可】

Unknown