Bulletin of the Korean Chemical Society | |
Photoluminescence and Structural Properties of Tin‐doped ZnO Thin Films Deposited by Sol–Gel Dip Coating | |
Young Leem1  Younggyu Kim2  Jae‐3  | |
[1] 749 Korea;Department of Nanoscience and Engineering Inje University Gimhae‐si 621‐ | |
关键词: ; ZnO thin films; Tin doping; Dip coating; Photoluminescence; X‐; Ray diffraction; | |
DOI : 10.1002/bkcs.10306 | |
学科分类:化学(综合) | |
来源: Korean Chemical Society | |
【 摘 要 】
Tinâdoped ZnO (TZO) thin films with various tin concentrations (0, 1, 2, 3, 4, and 5 atomic percent [at. %]) are prepared by the solâgel dipâcoating method. The doping effects of tin on the structural and optical properties of the TZO thin films are investigated. All the samples have a granular structure consisting of small particles and exhibited a preferred câaxis orientation. The transmittance and optical band gap of the TZO thin films increase at relatively low tin concentrations of 1â2âat. %, whereas they decrease at higher concentrations of 3â5âat. %. The ratio of nearâbandâedge emission intensity to deepâlevel emission intensity significantly increases with increasing tin concentrations from 0 to 4âat. %. In addition, lowâtemperature photoluminescence for undoped and 4âat. % TZO thin films are measured at 12âK to thoroughly analyze the effects of tin doping.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201904039724814ZK.pdf | 60KB | download |