Reconfigurable U-shaped tunnel field-effect transistor

IEICE Electronics Express

Sangwan Kim¹  Yoon Kim²  Deahoon Wee²  Hyun-Suk Choi²  Won Joo Lee²  Hee Tae kwon² 

[1] Department of Electrical and Computer Engineering, Ajou University;Department of Nanoenergy Engineering, BK21 Plus Nanoconvergence Technology Division, Pusan National University

关键词: reconfigurable field-effect transistor (RFET);    tunnel field-effect transistor (TFET);    recessed channel;    scaling down;    logic device;    subthreshold swing;    steep switching;   

DOI  :  10.1587/elex.14.20170758

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

A reconfigurable U-shaped tunnel field-effect transistor (RUTFET) is proposed as a low-power dynamically programmable logic device. It has several advantages over conventional reconfigurable TFETs 1) Excellent scalability without any degradation of subthreshold swing (SS) and drain-induced barrier thinning (DIBT) with recessed channel structure. 2) High current drivability with increased band-to-band tunneling junction 3) Scaling of SS with tunneling barrier width defined by geometrical parameters. In this manuscript, its electrical characteristics are examined by technology computer-aided design (TCAD) simulation. It shows ∼30× higher ON-state current than control devices and 41.8 mV/dec-SS during drain current increase by five orders magnitude. The reconfigurable operations for n- and p-type FETs are also discussed.

【 授权许可】

CC BY