SPICE simulation of tunnel FET aiming at 32 kHz crystal-oscillator operation

IEICE Electronics Express

Satoshi Takaya¹  Masato Koyama¹  Tetsufumi Tanamoto¹  Chika Tanaka¹ 

[1] Corporate R and D Center, Toshiba Corporation

关键词: tunnel field-effect transistor (TFET);    crystal oscillation;    CMOS;    IoT;   

DOI  :  10.1587/elex.15.20171232

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

We numerically investigate the possibility of using Tunnel field-effect transistor (TFET) in a 32 kHz crystal oscillator circuit to reduce power consumption. A simulation using SPICE (Simulation Program with Integrated Circuit Emphasis) is carried out based on a CMOS transistor model. It is shown that the power consumption of TFET is one-tenth that of conventional low-power CMOS.

【 授权许可】

CC BY