A fully integrated broadband, high-gain, high-power and high-efficiency UHF amplifier using GaAs HBT and GaN HEMT

IEICE Electronics Express

Feng Wang¹  Guann-Pyng Li²  Ruirong Hao²  Huai Gao⁴  Jianchun Cheng⁴  Xiaodong Zhang⁵ 

[1] Information Engineering, Suzhou University of Science and Technology;Key Laboratory of Modern Acoustics, Institute of Acoustics and School of Physics, Nanjing University;Photo Department of Electrical Engineering and Computer Science, University of California;RF Power Device and Circuit Engineering Research Center;School of Electronic &

关键词: MMIC;    high-power amplifier (HPA);    GaAs HBT;    GaN HEMT;    high-efficiency;    broadband;   

DOI  :  10.1587/elex.14.20170639

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

This paper presents a compact high-gain, high-efficiency, and broadband (higher than one octave) UHF high-power amplifier (HPA) using gallium arsenide (GaAs) and gallium nitride (GaN) technologies, the broadband HPA was fully integrated in a monolithic microwave integrated circuit (MMIC) with input and output matched to 50 Ω, the total size of the HPA is only 10 × 10 mm2. It generates a power gain higher than 44 dB, a continuous wave (CW) output power greater than 10 W and a corresponding power added efficiency (PAE) better than 55 percent across the full band from 220∼520 MHz. This design approach for high power GaN in space saving plastic package is enabling system designers to overcome the challenge to reduce the size, weight, and cost of system designs, while meeting the requirements of higher power, efficiency and reliability.

【 授权许可】

CC BY