Effect of input phase mismatch in Doherty power amplifiers

IEICE Electronics Express

Binboga Siddik Yarman¹  Osman Palamutcuogullari²  Omer Aydin² 

[1] Dept. of Electrical and Electronics Engineering, Istanbul University;Dept. of Electrical and Electronics Engineering, Istanbul Technical University

关键词: Doherty power amplifier;    GaN HEMT;   

DOI  :  10.1587/elex.13.20160870

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(23)In this paper, a new method is proposed to calculate transconductance ratio of the main and the peaking transistor of a Doherty power amplifier (DPA) which employs output matching circuits and offset lines. Cascade ABCD two-port parameters are used to analyze output section of the DPA. It is shown that output matching circuits has impact on the magnitude and the phase of the transconduction ratio. The effect of the input phase mismatch on the output power and efficiency is analyzed analytically. A 100 W dual drive Gallium Nitride (GaN) Doherty power amplifier is realized to experimentally verify the results. The drain efficiency measured as 68% at the correct phase, 65% for 30° input phase mismatch and 56% for 45° input phase mismatch.

【 授权许可】

Unknown