期刊论文详细信息
IEICE Electronics Express | |
Effect of offset lines in Doherty power amplifiers | |
Binboğa Sıddık Yarman1  Osman Palamutçuoğulları2  Omer Aydin2  | |
[1] Department of Electrical and Electronics Engineering of Istanbul University;Department of Electrical and Electronics Engineering of Istanbul Technical University | |
关键词: Doherty power amplifier; GaN HEMT; offset lines; | |
DOI : 10.1587/elex.12.20150867 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(14)Cited-By(1)In this paper, main and peaking voltages of a Doherty power amplifier are derived by means of the chain parameters of the output section to analyze the effect of the offset lines on the drain efficiency. It is shown that the main branch offset line dominates the drain efficiency. Furthermore, it is exhibited that moderate offset mismatch at the peaking branch has no significant influence on the output power performance of the amplifier. A 100 W GaN Doherty power amplifier is realized to experimentally verify the results.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300047619ZK.pdf | 190KB | download |