140 GHz power amplifier based on 0.5 µm composite collector InP DHBT

IEICE Electronics Express

Oupeng Li¹  Lei Wang¹  Yong Zhang¹  Tiedi Zhang¹  Ruimin Xu¹  Bin Niu²  Wei Cheng²  Yuan Wang²  Yan Sun² 

[1] Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute

关键词: InP DHBT;    composite collector;    power amplifier;    millimeter-wave;   

DOI  :  10.1587/elex.14.20170191

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

This paper presents a high gain, medium power amplifier for D band application based on 0.5 µm composite collector InP double heterojunction bipolar transistor (DHBT) process. The power amplifier has four ways that combined with a T-junction power combiner. And each way has four stages HBT to provide a high gain performance. The measurement results demonstrate a peak gain of 23.6 dB at 75 GHz and at 140 GHz the gain is 21.89 dB. The saturation output power is 13.7 dBm at 140 GHz with DC power consumption 250 mW.

【 授权许可】

CC BY