A 125–170 GHz wideband high-power amplifier using 0.5-µm InP DHBT

IEICE Electronics Express

Xiao Li¹  Yong Zhang¹  Tiedi Zhang¹  Ruimin Xu¹  Haiyan Lu²  Wei Cheng² 

[1] Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute

关键词: D-band;    InP DHBT;    millimeter-wave;    monolithic microwave integrated circuit (MMIC);    wideband;   

DOI  :  10.1587/elex.14.20170684

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

In this paper, a D-band power amplifier (PA) based on 0.5-µm InP DHBT is presented. Wilkinson combiners with broadband stepped-impedance matching are used, and the eight-way PA is designed for wideband power performance. As input power is fixed at 3 dBm, the PA exhibits a saturated output power of 16.8 dBm and 7.9% PAE at 150 GHz with >45-GHz 3-dB power bandwidth from 125 GHz to 170 GHz. Meanwhile the 1-dB gain compression output power is 15.9 dBm at 150 GHz. The >45-GHz 3-dB power bandwidth means a great flatness of power gain which is outstanding in reported D-band PAs to our best knowledge.

【 授权许可】

CC BY