A 125-GHz 140-mW InGaAs/InP composite-channel HEMT MMIC power amplifier module

IEICE Electronics Express

Takatomo Enoki²  Naoya Kukutsu¹  Toshihiko Kosugi²  Hiroki Sugiyama²  Hiroyuki Takahashi¹  Koichi Murata²  Yuichi Kado¹  Akihiko Hirata¹ 

[1] NTT Microsystem Integration Laboratories;NTT Photonics Laboratories

关键词: millimeter-wave;    power amplifier;    HEMT;   

DOI  :  10.1587/elex.6.1764

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(4)Cited-By(3)A millimeter-wave power amplifier module achieves 140mW maximum output power and 80mW output 1-dB gain compression point at 125GHz. The 0.08µm gate length InGaAs/InP composite-channel HEMTs were applied to single-chip coplanar-design amplifier MMIC. The module's output power in this frequency band is a record to the best of our knowledge.

【 授权许可】

Unknown