Full elastic strain and stress tensor measurements from individual dislocation cells in copper through-Si vias

IUCrJ

Xu, R.¹  Levine, L.E.²  Okoro, C.³ 

[1] Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439-4800, USA;Materials Science and Engineering Division, National Institute of Standards and Technology, 100 Bureau Drive, STOP 8553, Gaithersburg, Maryland 20899-8553, USA;Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8120, USA

关键词: FULL ELASTIC STRAIN;    STRESS TENSOR MEASUREMENT;    COPPER THROUGH-SI VIAS;    MICROELECTRONICS;   

DOI  :  10.1107/S2052252515015031

学科分类：数学（综合）

来源: International Union of Crystallography

【 授权许可】

CC BY