Risk Methodology for SEE Caused by Proton-Induced Fission of High-Z Materials in Microelectronics Packaging

Ladbury, Ray

关键词: RISK;    PROTONS;    SINGLE EVENT UPSETS;    RADIATION DAMAGE;    LINEAR ENERGY TRANSFER (LET);    ATOMIC ENERGY LEVELS;    MICROELECTRONICS;    PACKAGING;   

RP-ID  :  GSFC-E-DAA-TN69966

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

Proton-induced fission of high-Z (Atomic Number) materials can produce high fluxes of high-LET (Linear Energy Transfer) ions in microelectronics. We develop methods to evaluate risks for a range of destructive and nondestructive SEE (Single-Event Effects) modes caused by this threat.