DC characteristics of the SiC Schottky diodes

Bulletin of the Polish Academy of Sciences. Technical Sciences

W. JankeDepartment of Electronics and Informatics, Koszalin University of Technology, 2 ?niadeckich St., 75-453 Koszalin, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹  A. HapkaDepartment of Electronics and Informatics, Koszalin University of Technology, 2 ?niadeckich St., 75-453 Koszalin, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹  M. OleksyDepartment of Electronics and Informatics, Koszalin University of Technology, 2 ?niadeckich St., 75-453 Koszalin, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹ 

[1] Department of Electronics and Informatics, Koszalin University of Technology, 2 ?niadeckich St., 75-453 Koszalin, Poland

关键词: Keywords: silicon carbide;    Schottky diodes;    static characteristics;    high temperature;   

DOI  :  10.2478/v10175-011-0022-1

学科分类：工程和技术（综合）

来源: Polska Akademia Nauk * Centrum Upowszechniania Nauki / Polish Academy of Sciences, Center for the Advancement of Science

【 授权许可】

Unknown