Transport mechanisms in Schottky diodes realized on GaN

7th Maghreb Days of Material Sciences

Amor, Sarrah^1,3,4 ; Ahaitouf, Ali^1 ; Ahaitouf, Abdelaziz^2 ; Salvestrini, Jean Paul^3 ; Ougazzaden, Abdellah^4

USMBA, FST, LERSI, B.P. 2202, Fez, Morocco^1

USMBA, FP, LSI, Taza, Morocco^2

UL, Supelec, LMOPS, 2 Rue E. Belin, Metz

57070, France^3

GTL, UMI 2958, 2 Rue Marconi, Metz

57070, France^4

关键词: Barrier heights;    Complex problems;    Conduction Mechanism;    Metal semiconductor interface;    Schottky diodes;    Transport mechanism;    Transport phenomena;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/186/1/012001/pdf
DOI  :  10.1088/1757-899X/186/1/012001

来源: IOP

【 摘 要 】

This work is focused on the conducted transport mechanisms involved on devices based in gallium nitride GaN and its alloys. With considering all conduction mechanisms of current, its possible to understanded these transport phenomena. Thanks to this methodology the current-voltage characteristics of structures with unusual behaviour are further understood and explain. Actually, the barrier height (SBH) is a complex problem since it depends on several parameters like the quality of the metal-semiconductor interface. This study is particularly interesting as solar cells are made on this material and their qualification is closely linked to their transport properties.