Microstructure and Electrical Properties of Low Temperature Processed Ohmic Contacts to p-Type GaN

ETRI Journal

关键词: Tra;    Liquid nitrogen;    Porousness;    Adhesion;    Au:Pd Solid Solution;    Thermal Expansion Coefficient;    NiO;    c-TLM;    Work Function;    Conduction Mechanism;    Low Temperature Process;    Chemical Treatment;    Quenching;    Cryogenic Process;    Pd/Au;    Ni/Au;    Ohmic Contact;    p-GaN;   

Others  :  1184500
DOI  :  10.4218/etrij.02.0102.0503

【 摘 要 】

With Ni/Au and Pd/Au metal schemes and low temperature processing, we formed low resistance stable Ohmic contacts to p-type GaN. Our investigation was preceded by conventional cleaning, followed by treatment in boiling HNO3:HCl (1:3). Metallization was by

   

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